Colombo Bolognesi: Katalogdaten im Frühjahrssemester 2025 |
| Name | Herr Prof. Dr. Colombo Bolognesi |
| Lehrgebiet | Millimeterwellen und Terahertz-Elektronik |
| Adresse | Professur f. Millimeterwellen-Elek ETH Zürich, ETZ K 85 Gloriastrasse 35 8092 Zürich SWITZERLAND |
| Telefon | +41 44 632 87 75 |
| bcolombo@ethz.ch | |
| Departement | Informationstechnologie und Elektrotechnik |
| Beziehung | Ordentlicher Professor |
| Nummer | Titel | ECTS | Umfang | Dozierende | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 227-0056-00L | Halbleiterbauelemente  | 4 KP | 2V + 2U | C. Bolognesi, T. Popovic | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Kurzbeschreibung | The course covers the basic principles of semiconductor devices in micro-, opto-, and power electronics. It imparts knowledge both of the basic physics and on the operation principles of pn-junctions, diodes, contacts, bipolar transistors, MOS devices, solar cells, photodetectors, LEDs and laser diodes. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Lernziel | Understanding of the basic principles of semiconductor devices in micro-, opto-, and power electronics. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Inhalt | Brief survey of the history of microelectronics. Basic physics: Crystal structure of solids, properties of silicon and other semiconductors, principles of quantum mechanics, band model, conductivity, dispersion relation, equilibrium statistics, transport equations, generation-recombination (G-R), Quasi-Fermi levels. Physical and electrical properties of the pn-junction. pn-diode: Characteristics, small-signal behaviour, G-R currents, ideality factor, junction breakdown. MOS devices: Band diagram, MOSFET operation, CV- and IV characteristics, frequency limitations and non-ideal behaviour. Bipolar transistor: Operation principles, modes of operation, characteristics, models, simulation. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Skript | Lecture slides. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Literatur | The course follows the book Modern Semiconductor Devices for Integrated Circuits by Chenming Hu. More detailed book: Neamen, Semiconductor Physics and Devices, ISBN 978-007-108902-9, Fr. 89.00 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Voraussetzungen / Besonderes | Qualifications: Physics I+II | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Kompetenzen |
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| 227-0112-00L | High-Speed Signal Propagation | 6 KP | 2V + 2U | C. Bolognesi, T. Popovic | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Kurzbeschreibung | Understanding of high-speed signal propagation in microwave cables and integrated circuits and printed circuit boards. As clock frequencies rise in the GHz domain, there is a need grasp signal propagation to maintain good signal integrity in the face of symbol interference and cross-talk. The course is of high value to all interested in high-speed analog (RF, microwave) or digital systems. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Lernziel | Understanding of high-speed signal propagation in interconnects, microwave cables and integrated transmission lines such as microwave integrated circuits and/or printed circuit boards. As system clock frequencies continuously rise in the GHz domain, a need urgently develops to understand high-speed signal propagation in order to maintain good signal integrity in the face of phenomena such as inter-symbol interference (ISI) and cross-talk. Concepts such as Scattering parameters (or S-parameters) are key to the characterization of networks over wide bandwidths. At high frequencies, all structures effectively become "transmission lines." Unless care is taken, it is highly probable that one ends-up with a bad transmission line that causes the designed system to malfunction. Filters will also be considered because it turns out that some of the problems associated by lossy transmission channels (lines, cables, etc) can be corrected by adequate filtering in a process called "equalization." | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Inhalt | Transmission line equations of the lossless and lossy TEM-transmission line. Introduction of current and voltage waves. Representation of reflections in the time and frequency domain. Application of the Smith chart. Behavior of low-loss transmission lines. Attenuation and impulse distortion due to skin effect. Transmission line equivalent circuits. Group delay and signal dispersion. Coupled transmission lines. Scattering parameters. Butterworth-, Chebychev- and Bessel filter approximations: filter synthesis from low-pass filter prototypes. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Skript | Skript: Leitungen und Filter (DE) Lecture notes in English Exercise slides and problems in English | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Literatur | David M. Pozar, Microwave Engineering | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Kompetenzen |
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